Dependence of Al0.48In0.52As Schottky diode properties on molecular beam epitaxial growth temperature
نویسندگان
چکیده
منابع مشابه
Temperature dependence of electrical characteristics of Pt/GaN Schottky diode fabricated by UHV e-beam evaporation
Temperature-dependent electrical characterization of Pt/n-GaN Schottky barrier diodes prepared by ultra high vacuum evaporation has been done. Analysis has been made to determine the origin of the anomalous temperature dependence of the Schottky barrier height, the ideality factor, and the Richardson constant calculated from the I-V-T characteristics. Variable-temperature Hall effect measuremen...
متن کاملMolecular beam epitaxial growth of topological insulators.
With the molecular beam epitaxy technique, layer-by-layer growth of atomically flat topological insulator Bi(2) Te(3) and Bi(2) Se(3) thin films has been realized on Si(111) and graphene substrates, respectively. The growth criteria by which intrinsic topological insulators can readily be obtained is established. By using in situ angle-resolved photoemission spectroscopy and scanning tunneling ...
متن کاملGas-source molecular beam epitaxial growth, characterization, and light-emitting diode application of InxGa1-xP on GaP(100)
Highly lattice-mismatched In,Ga,+P (~~0.38) layers were grown on GaP substrates by gas-source molecular beam epitaxy. A relatively thin, compositionally linear-graded buffer layer was used to reduce the number of threading dislocations. Studies by double-crystal x-ray diffraction and transmission electron microscopy show this buffer layer to be 97% strain-relaxed along both (110) directions wit...
متن کاملTemperature Dependence of I-V Characteristics of Au/n-Si Schottky Barrier Diode
The current-voltage characteristics of Au/n-Si Schottky barrier diodes were measured in a wide temperature range of 70-310 K. The forward current-voltage characteristics have been analyzed on the basis of standard thermionic emission (TE) theory and assuming Gaussian distribution (single) of barrier height. Findings are investigated to explore TFE-mechanism with high value of characteristic ene...
متن کاملMolecular beam epitaxial growth of doped oxide semiconductors.
Molecular beam epitaxy coupled with the use of activated oxygen is shown to be a powerful tool for the growth of well-defined, structurally excellent oxide semiconductor films. The basics of the methodology are discussed. Several case studies are presented to illustrate some of the physical phenomena that can be investigated; these include Cr- and Co-doped TiO(2) anatase, Ti-doped α-Fe(2)O(3) h...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 1996
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.116466